november 2005 FDB8878 n-channel powertrench ? mosfet ?2005 fairchild semiconductor corporation FDB8878 rev. a www.fairchildsemi.com 1 FDB8878 n-channel logic level powertrench ? mosfet 30v, 48a, 14m ? general descriptions this n-channel mosfet has been designed specifically to improve the overall efficiency of dc/dc converters using either synchronous or c onventional switching pwm controllers. it has been optimized for low gate charge, low r ds(on) and fast switching speed. features ? r ds(on) = 14m ? , v gs = 10v, i d = 40a ? r ds(on) = 18m ? , v gs = 4.5v, i d = 36a ? high performance trench tec hnology for extremely low r ds(on) ? low gate charge ? high power and current handling capability ? rohs compliant to-263ab fdb series gate source drain (flange) g d d mosfet maximum ratings t a = 25c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v dss drain to source voltage 30 v v gs gate to source voltage 20 v i d drain current 48 a continuous (t c = 25 o c, v gs = 10v) continuous (t c = 25 o c, v gs = 4.5v) 42 a pulsed (note 4) 170 a e as single pulse avalanche energy (note 1) l = 1mh, i as = 11a 60 mj l = 0.03mh,i as = 38a 21 p d power dissipation 47.3 w t j , t stg operating and storage temperature -55 to 175 o c r jc thermal resistance, junction to case (note 2) 3.7 o c/w r ja thermal resistance, junction to am bient at 1000 seconds (note 3) 43 o c/w device marking device package reel size tape width quantity FDB8878 FDB8878 to-263 13? 24mm 800 units
FDB8878 n-channel powertrench ? mosfet FDB8878 rev. a www.fairchildsemi.com 2 electrical characteristics t a = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics b vdss drain to source breakdown voltage i d = 250 a, v gs = 0v 30 - - v ? bv dss ? t j breakdown voltage temp. coefficient i d = 250 a, referenced to 25 o c 21 mv/ o c i dss zero gate voltage drain current v ds = 24v - - 1 a v gs = 0v t a = 150 o c - - 250 i gss gate to source leakage current v gs = 20v - - 100 na on characteristics v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 a 1.2 1.7 2.5 v ? v gs(th) ? t j gate to source threshold voltage temperature coefficient i d = 250 a, referenced to 25 o c -5 mv/ o c r ds(on) drain to source on resistance i d = 40a, v gs = 10v - 12 14 m ? i d = 36a, v gs = 4.5v - 15 18 i d = 40, v gs = 10v, t a = 175 o c - 19 21 dynamic characteristics c iss input capacitance v ds = 15v, v gs = 0v, f = 1mhz - 927 1235 pf c oss output capacitance - 188 250 pf c rss reverse transfer capacitance - 117 175 pf r g gate resistance f = 1mhz 3.0 ? q g(tot) total gate charge at 10v v gs = 0v to 10v v dd = 15v i d = 40a i g = 1.0ma - 17.1 23 nc q g(5) total gate charge at 5v v gs = 0v to 5v - 9.2 12 nc q gs gate to source gate charge - 2.6 - nc q gs2 gate charge threshold to plateau - 1.7 - nc q gd gate to drain ?miller? charge - 3.7 - nc switching characteristics (v gs = 10v) t on turn-on time v dd = 15v, i d = 40a v gs = 10v, r gs = 16 ? - 255 383 ns t d(on) turn-on delay time - 11.1 ns t r rise time - 244 ns t d(off) turn-off delay time - 14.8 ns t f fall time - 35.3 ns t off turn-off time - 50 75 ns drain-source diode characteristics v sd source to drain diode voltage i sd = 40a - 1.1 1.25 v i sd = 3.2a - 0.85 1.2 v t rr reverse recovery time i sd = 40a, di sd /dt=100a/ s - 14.4 18.8 ns q rr reverse recovered charge i sd = 40a, di sd /dt=100a/ s - 5.1 6.7 nc notes: 1: starting t j = 25c, v dd = 30v, v gs = 10v 2: r ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the s older mounting surface of the drain pins. r jc is guaranteed by design while r ja is determined by the user?s board design. 3: r ja is measured with 1.0 in 2 copper on fr-4 board 4: pulse test: pulse width < 300 s, duty cycle < 2.0%
FDB8878 n-channel powertrench ? mosfet FDB8878 rev. a www.fairchildsemi.com 3 typical characteristics t a = 25c unless otherwise noted figure 1. 00.8 2.0 v ds , gate to source voltage (v) 0.4 1.2 1.6 20 30 50 80 0 i d , drain tcurrent (a) 70 60 40 10 pulse duration = 80 s duty cycle = 0.5% max 10v 5.0v 4.5v 4.0v 3.5v 3.0v on region characteristics figure 2. 0 40 i d , drain current (a) 20 60 80 1.4 2.0 0.8 1.8 1.6 1.2 1.0 10v 5.0v 4.5v 4.0v 3.5v 3.0v r ds(on) , normalized drain to source on-resistance pulse duration = 80 s duty cycle = 0.5% max 2.2 2.4 on-resistance variation with drain current and gate voltage figure 3. - 80 40 160 t j , junction temperature ( o c) 0 - 40 80 120 200 1.1 1.5 0.7 r ds(on), normalized drain to source on-resistance 1.7 1.3 0.9 i d = 40a v gs =10v on resistance variation with temperature figure 4. 4 28 10 v gs , gate to source voltage (v) 6 0.03 0.04 0.06 0.01 r ds(on) , on-resistance (ohm) 0.05 0.03 i d =40a pulse duration = 80 s duty cycle = 0.5% max t j =25 o c t j =175 o c on-resistance variation with gate-to-source votlage figure 5. 1.0 2.0 5.0 v gs , gate to source voltage (v) 4.0 3.0 20 30 50 80 0 i d , drain tcurrent (a) 70 60 40 10 v ds = 6v t a = 25 o c t a = -55 o c pulse duration = 80 s duty cycle = 0.5% max t a = 175 o c transfer characteristics figure 6. v sd , body diode forward voltage 00.6 1.5 0.9 1.2 0.3 0.1 1.0 100 0.001 i s , reverse current (a) 10 0.01 v gs = 0v t a = 175 o c t a = 25 o c t a = - 55 o c body diode forward voltage variation with source current and temperature
FDB8878 n-channel powertrench ? mosfet FDB8878 rev. a www.fairchildsemi.com 4 figure 7. gate charge characteri 4 01220 q g , gate charge (nc) 816 4 6 10 0 v gs , gate- source voltage 8 2 waveforms in ascending order: id = 40a id = 1a vdd =15v stics figure 8. capacitance characteristics 100 1000 10000 0.1 10 30 10 c oss c rss c iss v ds , drain to source voltage (v) capacitance (pf) 1 f = 1mhz v gs = 0v figure 9. unclamped inductive switching capability t av = (l)(i as )/(1.3*rated bv dss - v dd ) if r = 0 if r ? 0 t av = (l/r)ln[(i as *r)/(1.3*rated bv dss - v dd ) +1] starting t j = 25 o c starting t j = 150 o c 500 100 10 1 0.001 0.01 0.1 1 10 100 i as , avalanche current (a) t av , time in avalanche (ms) figure 10. 1 10 100 1000 1 10 100 dc 1ms 100 s v ds , drain to source voltage (v) i d , drain tcurrent (a) 10 s 0.1 operation in this area may be limited by r ds(on) single pulse t j = max rated t c = 25 o c safe operating area figure 11. maximum continuous drain current vs case temperature 0 75 150 v ds , gate to source voltage (v) 50 100 125 20 30 50 80 0 i d , drain tcurrent (a) 70 60 40 10 v gs = 10v v gs = 4.5v r jc = 3.17 o c/w 175 figure 12. single pulse maximum power dissipation 10 100 p (pk) , peak transient power (w) t, pulse width (s) 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 1000 10000 r jc = 0.5 o c/w t j = 25 o c single pulse typical characteristics t a = 25c unless otherwise noted
figure 13. transient thermal response curve 0.1 1 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 0.01 2 t, rectangular pulse duration (s) z jc , normalized thermal impedance notes: duty factor: d = t 1 /t 2 peak t j = p dm x r jc + t c p dm t 1 t 2 single pulse 0.5 0.2 0.1 0.05 0.01 0.02 duty cycle - descending order FDB8878 n-channel powertrench ? mosfet FDB8878 rev. a www.fairchildsemi.com 5
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